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LM359N Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM359N Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 24 page  Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage 22 V DC or ±11 V DC Power Dissipation (Note 2) J Package 1W N Package 750 mW Maximum T J J Package +150˚C N Package +125˚C Thermal Resistance J Package θ jA 147˚C/W still air 110˚C/W with 400 linear feet/min air flow N Package θ jA 100˚C/W still air 75˚C/W with 400 linear feet/min air flow Input Currents, I IN(+) or IIN(−) 10 mA DC Set Currents, I SET(IN) or ISET(OUT) 2mA DC Operating Temperature Range LM359 0˚C to +70˚C Storage Temperature Range −65˚C to +150˚C Lead Temperature (Soldering, 10 sec.) 260˚C Soldering Information Dual-In-Line Package Soldering (10 sec.) 260˚C Small Outline Package Vapor Phase (60 sec.) 215˚C Infrared (15 sec.) 220˚C See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. ESD rating to be determined. Electrical Characteristics I SET(IN) = ISET(OUT) = 0.5 mA, Vsupply = 12V, TA = 25˚C unless otherwise noted Parameter Conditions LM359 Units Min Typ Max Open Loop Voltage V supply = 12V, RL = 1k, f = 100 Hz 62 72 dB Gain T A = 125˚C 68 dB Bandwidth R IN = 1kΩ,Ccomp = 10 pF 15 30 MHz Unity Gain Gain Bandwidth Product R IN = 50Ω to 200Ω 200 400 MHz Gain of 10 to 100 Slew Rate Unity Gain R IN = 1kΩ,Ccomp = 10 pF 30 V/µs Gain of 10 to 100 R IN < 200Ω 60 V/µs Amplifier to Amplifier f = 100 Hz to 100 kHz, R L = 1k −80 dB Coupling Mirror Gain at 2 mA I IN(+), ISET = 5 µA, TA = 25˚C 0.9 1.0 1.1 µA/µA (Note 3) at 0.2 mA I IN(+), ISET = 5 µA 0.9 1.0 1.1 µA/µA Over Temp. at 20 µA I IN(+), ISET = 5 µA 0.9 1.0 1.1 µA/µA Over Temp. ∆Mirror Gain at 20 µA to 0.2 mA I IN(+) 3 5 % (Note 3) Over Temp, I SET = 5µA Input Bias Current Inverting Input, T A = 25˚C 8 15 µA Over Temp. 30 µA Input Resistance ( βre) Inverting Input 2.5 k Ω Output Resistance I OUT = 15 mA rms, f = 1 MHz 3.5 Ω Output Voltage Swing R L = 600Ω V OUT High I IN(−) and IIN(+) Grounded 9.5 10.3 V V OUT Low I IN(−) = 100 µA, IIN(+) = 0 2 50 mV www.national.com 2 |
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Descripción similar - LM359N |
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