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2SD1358 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SD1358
Descripción Electrónicos  isc Silicon NPN Darlington Power Transistor
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1358 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Darlington Power Transistor
2SD1358
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA ; IB= 0
80
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 3A; IB= 6mA
1.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 7A; IB= 14mA
2.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3A; IB= 6mA
2.5
V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
100
μ
A
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
mA
hFE -1
DC Current Gain
IC= 3A ; VCE= 3V
2000
15000
hFE -2
DC Current Gain
IC= 7A ; VCE= 3V
1000
Switching times
ton
Turn-on Time
IC= 3A , IB1= IB2= 6mA
RL= 15Ω; VCC= 45V
PW=20μs; Duty Cycle≤1%
0.8
μ
s
tstg
Storage Time
3.0
μ
s
tf
Fall Time
2.5
μ
s


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