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TIP102G Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza TIP102G
Descripción Electrónicos  Plastic Medium-Power Complementary Silicon Transistors
Download  7 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

TIP102G Datasheet(HTML) 2 Page - ON Semiconductor

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TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
www.onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
TIP100,
TIP105
TIP101,
TIP106
TIP102,
TIP107
Unit
Collector − Emitter Voltage
VCEO
60
80
100
Vdc
Collector − Base Voltage
VCB
60
80
100
Vdc
Emitter − Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous
− Peak
IC
8.0
15
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
80
0.64
W
W/°C
Unclamped Inductive Load Energy (1)
E
30
mJ
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
2.0
0.016
W
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.56
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
VCEO(sus)
60
80
100
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP100, TIP105
(VCE = 40 Vdc, IB = 0)
TIP101, TIP106
(VCE = 50 Vdc, IB = 0)
TIP102, TIP107
ICEO
50
50
50
mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
TIP100, TIP105
(VCB = 80 Vdc, IE = 0)
TIP101, TIP106
(VCB = 100 Vdc, IE = 0)
TIP102, TIP107
ICBO
50
50
50
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
8.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)
hFE
1000
200
20,000
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 6.0 mAdc)
(IC = 8.0 Adc, IB = 80 mAdc)
VCE(sat)
2.0
2.5
Vdc
Base−Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc)
VBE(on)
2.8
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe
4.0
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
TIP105, TIP106, TIP107
TIP100, TIP101, TIP102
Cob
300
200
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.


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