Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Toshiba Semiconductor |
TPC8004
|
510Kb / 7P |
Silicon N Channel MOS Type (MOSVI)
|
TPC8302
|
450Kb / 7P |
Silicon P Channel MOS Type (L2-MOSVI)
|
TPC8301
|
433Kb / 7P |
Silicon P Channel MOS Type (L2-MOSVI)
|
2SK3561
|
227Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
|
TPC8002
|
514Kb / 7P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
|
2SK3934
|
75Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
|
2SK3567
|
94Kb / 3P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
|
K4110
|
199Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2009-09-29 |
2SK3569
|
150Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
|
TPC8202
|
339Kb / 7P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
|