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2SD1816 Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza 2SD1816
Descripción Electrónicos  Bipolar Transistor
Download  7 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SD1816 Datasheet(HTML) 2 Page - ON Semiconductor

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2SB1216, 2SD1816
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
at Ta
= 25°C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(−)100V, IE=0A
(
−)1
μA
Emitter Cutoff Current
IEBO
VEB=(−)4V, IC=0A
(
−)1
μA
DC Current Gain
hFE1
VCE=(−)5V, IC=(−)0.5A
140*
400*
hFE2
VCE=(−)5V,IC=(−)3A
40
Gain-Bandwidth Product
fT
VCE=(−)10V, IC=(−)0.5A
(130) 180
MHz
Output Capacitance
Cob
VCB=(−)10V, f=1MHz
(65) 40
pF
Collector to Emitter Saturation
Voltage
VCE(sat)
IC=(−)2A, IB=(−)0.2A
(
−200)150
(
−500)400
mV
Base to Emitter Saturation Voltage
VBE(sat)
IC=(−)2A, IB=(−)0.2A
(
−) 0.9
(
−) 1.2
V
Collector to Base Breakdown
Voltage
V(BR)CBO
IC=(−)10μA, IE=0A
(
−)120
V
Collector to Emitter Breakdown
Voltage
V(BR)CEO
IC=(−)1mA, RBE=∞
(
−)100
V
Emitter to Base Breakdown Voltage
V(BR)EBO
IE=(−)10μA, IC=0A
(
−) 6
V
Turn-On Time
ton
See specified Test
Circuit
100
ns
Storage Time
tstg
(800) 900
ns
Fall Time
tf
50
ns
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*: The 2SB1216/2SD1816 are classified by 0.5A hFE as follows:
Rank
S
T
hFE
140 to 280
200 to 400
Fig.1 Switching Time Test Circuit


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