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BC848CPDW1 Datasheet(PDF) 2 Page - ON Semiconductor |
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BC848CPDW1 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 17 page BC846BPDW1, BC847BPDW1, BC848CPDW1 Series www.onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation Per Device FR− 5 Board (Note 1) TA = 25°C Derate above 25 °C PD 380 250 3.0 mW mW/ °C mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 328 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °C 1. FR−5 = 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mA) BC846, SBC846 Series BC847, SBC847 Series BC848 Series V(BR)CEO 65 45 30 − − − − − − V Collector − Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) BC846, SBC846 Series BC847B, SBC847B Only BC848 Series V(BR)CES 80 50 30 − − − − − − V Collector − Base Breakdown Voltage (IC = 10 mA) BC846, SBC846 Series BC847, SBC847 Series BC848 Series V(BR)CBO 80 50 30 − − − − − − V Emitter − Base Breakdown Voltage (IE = 1.0 mA) BC846, SBC846 Series BC847, SBC847 Series BC848 Series V(BR)EBO 6.0 6.0 6.0 − − − − − − V Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO − − − − 15 5.0 nA mA ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) BC846B, SBC846B, BC847B, SBC847B BC848C (IC = 2.0 mA, VCE = 5.0 V) BC846B, SBC846B, BC847B, SBC84B7 BC848C hFE − − 200 420 150 270 290 520 − − 475 800 − Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) All devices except SBC847BPDW1T1G SBC847BPDW1T1G only (IC = 100 mA, IB = 5.0 mA) All devices (IC = 2 mA, IB = 0.5 mA) SBC847BPDW1T1G only VCE(sat) − − − − − − − 0.024 0.25 0.1 0.6 − V Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VBE(sat) − − 0.7 0.9 − − V Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 − 660 − 700 770 mV SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT 100 − − MHz Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB |
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