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SD012-151-011 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

No. de pieza SD012-151-011
Descripción Electrónicos  InGaAs Photodetector
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InGaAs Photodetector
PRELIMINARY
SD012-151-011
WWW.LUNAINC.COM
Precision – Control – Results
Information in this technical datasheet is believed to
be correct and reliable. However, no responsibility is
assumed for possible inaccuracies or omission.
Specifications are subject to change without notice.
Page 2/2
REV 01-04-16
© 2016 Luna Optoelectronics. All rights reserved.
Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935
OPTO-ELECTRICAL PARAMETERS
Ta = 23°C unless noted otherwise
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Breakdown Voltage
Ibias = 1 µA
-
50
-
V
Responsivity
λ= 1310 nm, Vr=5V
0.80
0.90
-
A/W
Shunt Resistance
Vbias = 10 mV
0.2
1.0
-
G
Dark Current
Vbias = 5V
-
0.1
10.0
nA
Capacitance
Vbias = 5V; f = 1.0 MHz
-
2.0
10.0
pF
Rise Time (50
Ω load)
Vbias = 5V; λ= 1310 nm
-
1.2
-
ns
Spectral Range
800
-
1700
nm
Noise Equivalent Power
Vr= 5V@
λ=1310
-
4.0x10
-15
-
W/Hz
1/2
TYPICAL PERFORMANCE
NOISE CURRENT vs. REVERSE BIAS
DARK CURRENT vs REVERSE BIAS
SPECTRAL RESPONSE
DARK CURRENT vs REVERSE BIAS
1.E-15
1.E-14
1.E-13
1.E-12
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
Reverse Voltage (V)
Noise current @ 23C
1.E-13
1.E-11
1.E-09
1.E-07
1.E-05
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
Reverse Voltage [V]
Reverse dark current @ 23 C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
600
800
1000
1200
1400
1600
1800
Wavelength [nm]
Typical Responsivity
5
7
9
11
13
15
17
19
21
23
0
5
10
15
20
Reverse Bias [V]
Typical Capacitance at 1 MHz


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