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IRL2703S Datasheet(PDF) 1 Page - International Rectifier |
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IRL2703S Datasheet(HTML) 1 Page - International Rectifier |
1 / 9 page HEXFET® Power MOSFET IRL2703S PD - 9.1360 l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated VDSS = 30V RDS(on) = 0.04Ω ID = 24A S D G 11/18/96 PRELIMINARY Parameter Min. Typ. Max. Units RθJC Junction-to-Case –––– –––– 3.3 RθJA Junction-to-Ambient (PCB Mount,steady-state)** –––– –––– 40 Thermal Resistance °C/W Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 24 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 17 A IDM Pulsed Drain Current 96 PD @TC = 25°C Power Dissipation 45 W Linear Derating Factor 0.30 W/°C VGS Gate-to-Source Voltage ±16 V EAS Single Pulse Avalanche Energy
77 mJ IAR Avalanche Current 14 A EAR Repetitive Avalanche Energy 4.5 mJ dv/dt Peak Diode Recovery dv/dt
3.5 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Absolute Maximum Ratings Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. Description 2 D Pak |
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