BC807-40WT1G datasheet(3/8 Pages) ONSEMI

No. de pieza	BC807-40WT1G

Descripción Electrónicos	General Purpose Transistors

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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BC807−25W, BC807−40W

http://onsemi.com

3

TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W

Figure 1. DC Current Gain vs. Collector

Current

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0

100

200

300

400

500

1

0.1

0.01

0.001

0.01

0.1

1

Figure 3. Base Emitter Saturation Voltage vs.

Collector Current

Figure 4. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

1

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.0

1.1

1

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

1

VCE = 1 V

150

°C

−55

°C

25

°C

IC/IB = 10

150

°C

−55

°C

25

°C

0.4

0.9

IC/IB = 10

150

°C

−55

°C

25

°C

0.4

0.7

1.1

VCE = 5 V

150

°C

−55

°C

25

°C

Figure 5. Current Gain Bandwidth Product vs.

Collector Current

IC, COLLECTOR CURRENT (A)

1000

10

1

0.1

10

100

VCE = 1 V

TA = 25°C

1000

100

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