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TPCS8209 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPCS8209 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPCS8209 2002-01-17 4 ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID Common source Ta = 25°C Pulse test 0 0 0.4 0.8 1.2 1.6 2.0 1 2 3 4 5 VGS = 1.4 V 1.5 1.6 1.7 1.8 4 3 2 1.9 Drain-source voltage VDS (V) Drain-source voltage VDS (V) Gate-source voltage VGS (V) Gate-source voltage VGS (V) Drain current ID (A) Drain current ID (A) 0 0 1 2 3 4 5 2 4 6 8 10 Common source VDS = 10 V Pulse test Ta = −55°C 25 100 Common source Ta = 25°C Pulse test 0 0 2 4 6 8 10 0.4 0.8 1.2 1.6 2 ID = 10 A 5 2.5 1.25 1 0.1 1 10 10 100 Common source VDS = 10 V Pulse test Ta = −55°C 100 25 3 5 30 50 1 0.1 1 10 10 100 Common source Ta = 25°C Pulse test VGS = 2 V 2.5 4 3 5 30 50 0 2 4 6 8 10 VGS = 1.4 V 1.6 1.7 1.9 2 0 1 2 3 Common source Ta = 25°C Pulse test 4 1.8 1.5 3 4 5 |
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