2SJ456

No.5442-1/4

Features

•

Low ON-resistance.

•

High-speed diode incorporated.

•

Enables simplified fabrication, high-density mount-

ing, and miniaturization in end products due to the

surface mountable package.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--250

V

Gate-to-Source Voltage

VGSS

±30

V

Drain Current (DC)

ID

--9

A

Drain Current (Pulse)

IDP

PW

≤10µs, duty cycle≤1%

--36

A

Allowable Power Dissipation

PD

Tc=25

°C50

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0

--250

V

Gate-to-Source Breakdown Voltage

V(BR)GSS

IG=±100µA, VDS=0

±30

V

Zero-Gate Voltage Drain Current

IDSS

VDS=--250V, VGS=0

--1.0

mA

Gate-to-Source Leakage Current

IGSS

VGS=±25V, VDS=0

±10

µA

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--1mA

--2.0

--3.0

V

Forward Transfer Admittance

yfs

VDS=--10V, ID=--5A

4.8

8.0

S

Static Drain-to-Source On-State Resistance

RDS(on)

ID=--5A, VGS=--10V

0.4

0.55

Ω

Input Capacitance

Ciss

VDS=--20V, f=1MHz

1950

pF

Output Capacitance

Coss

VDS=--20V, f=1MHz

505

pF

Reverse Transfer Capacitance

Crss

VDS=--20V, f=1MHz

230

pF

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN5442A

2SJ456

Package Dimensions

unit : mm

2128

[2SJ456]

22004 TS IM TA-3871

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

1 : Gate

2 : Source

3 : Drain

SANYO : ZP

6.2

7.8

8.2

1.0

1.0

5.08

2.54

2.54

0.3

0.6

0.6

7.8

10.0

6.0

1

2

3