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2SJ456 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SJ456 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page 2SJ456 No.5442-1/4 Features • Low ON-resistance. • High-speed diode incorporated. • Enables simplified fabrication, high-density mount- ing, and miniaturization in end products due to the surface mountable package. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --250 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) ID --9 A Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% --36 A Allowable Power Dissipation PD Tc=25 °C50 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --250 V Gate-to-Source Breakdown Voltage V(BR)GSS IG=±100µA, VDS=0 ±30 V Zero-Gate Voltage Drain Current IDSS VDS=--250V, VGS=0 --1.0 mA Gate-to-Source Leakage Current IGSS VGS=±25V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --2.0 --3.0 V Forward Transfer Admittance yfs VDS=--10V, ID=--5A 4.8 8.0 S Static Drain-to-Source On-State Resistance RDS(on) ID=--5A, VGS=--10V 0.4 0.55 Ω Input Capacitance Ciss VDS=--20V, f=1MHz 1950 pF Output Capacitance Coss VDS=--20V, f=1MHz 505 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 230 pF Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN5442A 2SJ456 Package Dimensions unit : mm 2128 [2SJ456] 22004 TS IM TA-3871 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications 1 : Gate 2 : Source 3 : Drain SANYO : ZP 6.2 7.8 8.2 1.0 1.0 5.08 2.54 2.54 0.3 0.6 0.6 7.8 10.0 6.0 1 2 3 |
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