2SK3439

2001-12-11

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

2SK3439

DC-DC Converter

Relay Drive and Motor Drive Applications

==== 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

30

V

30

V

Gate-source voltage

±20

V

DC

(Note 1)

75

Drain current

(Note 1)

300

A

Drain power dissipation (Tc

= 25°C)

125

W

Single pulse avalanche energy

(Note 2)

731

mJ

Avalanche current

75

A

Repetitive avalanche energy (Note 3)

12.5

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

1.00

°C/W

Note 1: Please use devices on conditions that the channel temperature

is below 150°C.

Note 3: Repetitive rating; pulse width limited by maximum channel

temperature.

This transistor is an electrostatic sensitive device. Please handle with

caution.

Marking

Unit: mm

JEDEC

―

JEITA

SC-97

TOSHIBA

2-9F1B

Weight: 0.74 g (typ.)

Notice:

Please use the S1 pin for gate

input signal return. Make

sure that the main current

flows into S2 pin.

1

2

3

4

※ Lot Number

Month (starting from alphabet A)

Year

(last number of the christian era)

※

Type

K3439