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FDD6685 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDD6685 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page February 2004 ©2004 Fairchild Semiconductor Corporation FDD6685 Rev D (W) FDD6685 30V P-Channel PowerTrench ® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –40 A, –30 V. R DS(ON) = 20 m Ω @ V GS = –10 V RDS(ON) = 30 m Ω @ V GS = –4.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Qualified to AEC Q101 G S D TO-252 S G D Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ±25 V ID –40 –11 Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed, PW ≤ 100µs (Note 1b) –100 A Power Dissipation for Single Operation (Note 1) 52 (Note 1a) 3.8 PD (Note 1b) 1.6 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.9 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. |
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