FMG4A datasheet(2/3 Pages) ROHM

No. de pieza	FMG4A

Descripción Electrónicos	General purpose (dual digital transistors)

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Fabricante Electrónico	ROHM [Rohm]

Página de inicio	http://www.rohm.com

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2 / 3 page

EMG4 / UMG4N / FMG4A

Transistors

Rev.A

2/2

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Transition frequency

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE

fT

50

5

−

100

−

250

−

250

−

0.5

0.3

600

−

V

µA

V

−

MHz

∗

R1

710

13

k

Ω

IC

=50µA

IC

=1mA

IE

=50µA

VCB

=50V

VEB

=4V

VCE

=10V, IE= −5mA, f=100MHz

IC/IB

=10mA/1mA

VCE

=5V, IC=1mA

∗Transition frequency of the device.

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Input resistance

Electrical characteristics curves

COLLECTOR CURRENT : IC

(A)

100

µ 200µ 500µ 1m 2m

5m 10m 20m

50m 100m

1k

500

200

100

50

20

10

5

2

1

VCE

=5V

Ta

=100°C

25

°C

−40°C

Fig.1 DC current gain vs. collector

current

COLLECTOR CURRENT : IC

(A)

100

µ 200µ 500µ 1m 2m

5m 10m 20m

50m 100m

1

500m

200m

100m

50m

20m

10m

5m

2m

1m

lC/lB

=10

Ta

=100°C

25

°C

−40°C

Fig.2 Collector-emitter saturation

voltage vs. collector current

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