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MB85R4M2TFN-G Datasheet(PDF) 9 Page - Fujitsu Component Limited.

No. de pieza MB85R4M2TFN-G
Descripción Electrónicos  4 M (256 K 횞 16) Bit
Download  23 Pages
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Fabricante Electrónico  FUJITSU [Fujitsu Component Limited.]
Página de inicio  http://edevice.fujitsu.com/fmd/en/index.html
Logo FUJITSU - Fujitsu Component Limited.

MB85R4M2TFN-G Datasheet(HTML) 9 Page - Fujitsu Component Limited.

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DS501-00024-4v0-E
9
MB85R4M2T
(2) Write Cycle
Parameter
Symbol
Value
(VDD=1.8V to 2.7V)
Value
(VDD=2.7V to 3.6V)
Unit
Min
Max
Min
Max
Write Cycle Time
tWC
185
150
ns
/CE Active Time
tCA
95
75
ns
/CE↓ to /WE↑ Time
tCW
95
75
ns
Pre-charge Time
tPC
90
75
ns
Write Pulse Width
tWP
20
20
ns
Address Setup Time
tAS
0
0
ns
Address Hold Time
tAH
95
75
ns
/WE↓ to /CE↑ Time
tWLC
20
20
ns
Address Transition to
/WE↑ Time
tAWH
185
150
ns
/WE↑ to Address Transition Time
tWHA
0
0
ns
/LB, /UB Setup Time
tBS
2
2
ns
/LB, /UB Hold Time
tBH
0
0
ns
Data Setup Time
tDS
10
10
ns
Data Hold Time
tDH
0
0
ns
/WE Output Floating Time
tWZ
10
10
ns
/WE Output Access Time*1
tWX
10
10
ns
Write Setup Time*1
tWS
0
0
ns
Write Hold Time*1
tWH
0
0
ns
*1: Writing operation applies “Write Cycle Timing 1” or “Write Cycle Timing 2” by the relation of /CE and
/WE timing. The values of tWX, tWS and tWH are defined by these operations. The conditions of tWS and
tWH are not checked at shipping test.
(3) Power ON/OFF Sequence and Sleep Mode Cycle
Parameter
Symbol
Value
Unit
Min
Max
/CE level hold time for Power ON
tPU
450
μs
/CE level hold time for Power OFF
tPD
85
ns
Power supply rising time
tVR
50
μs/V
Power supply falling time
tVF
100
μs/V
/ZZ active time
tZZL
1
μs
Sleep mode enable time
tZZEN
0
μs
/CE level hold time for Sleep mode release
tZZEX
450
μs


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