Si3127DV

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Vishay Siliconix

S14-0767-Rev. A, 14-Apr-14

4

Document Number: 64282

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area

0.1

1

10

100

0.0

0.3

0.6

0.9

1.2

V

T

T

1.15

1.35

1.55

1.75

1.95

2.15

- 50

- 25

0

25

50

75

100

125

150

T

I

0

0.05

0.10

0.15

0.20

2

4

6

8

10

V

T

T

I

0

50

10

Time (s)

20

1

100

600

10

30

40

0.01

0.1

1

10

100

0.1

1

10

100

V

* V

100 ms

Limited by R

1 ms

T

BVDSS Limited

10 ms

100 μs

10 s, 1 s

DC

Limited by I

DM