2N2905AL datasheet(1/2 Pages) MICROSEMI

No. de pieza	2N2905AL

Descripción Electrónicos	PNP SWITCHING SILICON TRANSISTOR

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Fabricante Electrónico	MICROSEMI [Microsemi Corporation]

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TECHNICAL DATA

PNP SWITCHING SILICON TRANSISTOR

Qualified per MIL-PRF-19500/290

Devices

Qualified Level

2N2904

2N2904A

2N2904AL

2N2905

2N2905A

2N2905AL

JAN

JANTX

JANTXV

JANS

MAXIMUM RATINGS

Ratings

Symbol

2N2904

2N2905

2N2904A, L

2N2905A, L

Unit

Collector-Emitter Voltage

VCEO

40

60

Vdc

Collector-Base Voltage

VCBO

60

Vdc

Emitter-Base Voltage

VEBO

5.0

Vdc

Collector Current

IC

600

mAdc

Total Power Dissipation @ TA = +25

0C (1)

@ TC = +25

0C (2)

PT

0.6

3.0

W

Operating & Storage Junction Temp. Range

TJ, Tstg

-65 to +200

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

RθJC

0.29

0C/mW

1) Derate linearly 3.43 W/

0C for TA > +250C

2) Derate linearly 17.2 W/

0C for TC > +250C

TO-39* (TO-205AD)

2N2904, 2N2904A

2N2905, 2N2905A

TO-5*

2N2904AL, 2N2905AL

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (TA = +25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 10 mAdc

2N2904, 2N2905

2N2904A, L, 2N2905A, L

V(BR)CEO

40

60

Vdc

Collector-Emitter Cutoff Voltage

VCE = 40 Vdc

2N2904, 2N2905

VCE = 60 Vdc

2N2904A, L, 2N2905A, L

ICES

1.0

µAdc

Collector-Base Cutoff Current

VCB = 50 Vdc

2N2904, 2N2905

2N2904A, L, 2N2905A, L

VCB = 60 Vdc

All Types

ICBO

20

10

ηAdc

µAdc

Emitter-Base Cutoff Current

VEB = 3.5 Vdc

VEB = 5.0 Vdc

IEBO

50

10

ηAdc

µAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

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