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2SC3675 Datasheet(PDF) 1 Page - Sanyo Semicon Device

No. de pieza 2SC3675
Descripción Electrónicos  900V/100mA High-Voltage Amplifier High-Voltage Switching Applications
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Fabricante Electrónico  SANYO [Sanyo Semicon Device]
Página de inicio  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC3675 Datasheet(HTML) 1 Page - Sanyo Semicon Device

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SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
900V/100mA High-Voltage Amplifier
High-Voltage Switching Applications
Ordering number:EN1800E
2SC3675
N2098HA (KT)/80796TS (KOTO) 8-9202/4237AT/3195KI, TS No.1800–1/3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2010C
[2SC3675]
Applications
· High voltage amplifiers.
· High-voltage switching applications.
· Dynamic focus applications.
Features
· High breakdown voltage (VCEO min=900V).
· Small Cob (Cob typ=2.8pF).
· Wide ASO (Adoption of MBIT process).
· High reliability (Adoption of HVP process).
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Base
2 : Collector
3 : Emitter
Tc=25˚C
JEDEC : TO-220AB
EIAJ
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