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2SC3675 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SC3675 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 3 page SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Triple Diffused Planar Silicon Transistor 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications Ordering number:EN1800E 2SC3675 N2098HA (KT)/80796TS (KOTO) 8-9202/4237AT/3195KI, TS No.1800–1/3 Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 2010C [2SC3675] Applications · High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications. Features · High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=2.8pF). · Wide ASO (Adoption of MBIT process). · High reliability (Adoption of HVP process). ˚C ˚C Electrical Characteristics at Ta = 25˚C 1 : Base 2 : Collector 3 : Emitter Tc=25˚C JEDEC : TO-220AB EIAJ : SC46 r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s a B - o t - r o t c e ll o CV O B C 0 0 5 1V e g a t l o V r e t t i m E - o t - r o t c e ll o CV O E C 0 0 9V e g a t l o V e s a B - o t - r e t t i m EV O B E 5V t n e r r u C r o t c e ll o CIC 0 0 1A m ) e s l u P ( t n e r r u C r o t c e ll o CI P C 0 0 3A m n o i t a p i s s i D r o t c e ll o CPC 0 1W e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m t n e r r u C f f o t u C r o t c e ll o CI O B C V B C I , V 0 0 9 = E 0 =0 1A µ t n e r r u C f f o t u C r e t t i m EI O B E V B E I , V 4 = C 0 =0 1A µ n i a G t n e r r u C C D h E F V E C I , V 5 = C A m 0 1 = 0 3 t c u d o r P h t d i w d n a B - n i a GfT V E C I , V 0 1 = C A m 0 1 = 6z H M e g a t l o V n o i t a r u t a S r e t t i m E - o t - r o t c e ll o CV ) t a s ( E C IC I , A m 0 2 = B A m 4 = 5V e g a t l o V n o i t a r u t a S r e t t i m E - o t - e s a BV ) t a s ( E B IC I , A m 0 2 = B A m 4 = 2V e g a t l o V n w o d k a e r B e s a B - o t - r o t c e ll o CV O B C ) R B ( IC I , A m 1 = E 0 =0 0 5 1V e g a t l o V n w o d k a e r B r e t t i m E - o t - r o t c e ll o CV O E C ) R B ( IC R , A m 1 = E B =∞ 0 0 9V e g a t l o V n w o d k a e r B e s a B - o t - r e t t i m EV O B E ) R B ( IE I , A m 1 = C 0 =5 V e c n a t i c a p a C t u p t u Ob o CV B C z H M 1 = f , V 0 0 1 = 8 . 2F p |
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