BUD42D datasheet(6/14 Pages) ONSEMI

No. de pieza	BUD42D

Descripción Electrónicos	High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability

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BUD42D

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6

TYPICAL SWITCHING CHARACTERISTICS

Figure 17. Inductive Fall and Cross Over Time,

tfi and tc @ hFE = 5

100

2

1

0

IC, COLLECTOR CURRENT (AMPS)

Figure 18. Inductive Fall Time,

tfi @ hFE = 10

100

2

1

0.5

IC, COLLECTOR CURRENT (AMPS)

1.5

250

200

150

Figure 19. Inductive Cross Over Time,

tc @ hFE = 10

Figure 20. Inductive Storage Time, tsi

5

1

12

4

3

hFE, FORCED GAIN

4

3

2

5

Figure 21. Inductive Fall Time, tf

300

100

10

6

3

hFE, FORCED GAIN

Figure 22. Inductive Cross Over Time, tc

300

200

100

10

4

2

hFE, FORCED GAIN

8

200

6

48

400

300

200

0.5

1.5

TJ = 125°C

TJ = 25°C

IBon = IBoff

VCE = 15 V

VZ = 300 V

LC = 200 µH

TJ = 125°C

TJ = 25°C

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200 µH

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200 µH

tfi

tc

TJ = 125°C

TJ = 25°C

200

2

1

0.5

IC, COLLECTOR CURRENT (AMPS)

1.5

500

400

300

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200 µH

TJ = 125°C

TJ = 25°C

7

68

10

911

IC = 1 A

IC = 0.3 A

7

59

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200 µH

TJ = 125°C

TJ = 25°C

IC = 1 A

IC = 0.3 A

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200 µH

TJ = 125°C

TJ = 25°C

IC = 1 A

IC = 0.3 A

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