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BAS16P2T5G Datasheet(PDF) 2 Page - ON Semiconductor |
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BAS16P2T5G Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 4 page  BAS16P2T5G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 100 Vdc) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) IR − − − − 1.0 100 50 30 mAdc Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) 100 − Vdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF − − − − 715 855 1000 1250 mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 2.0 pF Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) VFR − 1.75 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 W) trr − 6.0 ns Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W) QS − 45 pC |
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