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BAS16L Datasheet(PDF) 1 Page - ON Semiconductor

No. de pieza BAS16L
Descripción Electrónicos  Switching Diode
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
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BAS16L Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 12
1
Publication Order Number:
BAS16LT1/D
BAS16L, SBAS16L
Switching Diode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
100
V
Peak Forward Current
IF
200
mA
Non−Repetitive Peak Forward Surge
Current 60 Hz
IFSM(surge)
500
mA
Repetitive Peak Forward Current
(Note 3)
IFRM
1.0
A
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t = 1
ms
t = 10
ms
t = 100
ms
t = 1 ms
t = 1 s
IFSM
36.0
18.0
6.0
3.0
0.7
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
− 55 to +150
°C
1. FR− 5 = 1.0
 0.75  0.062 in.
2. Alumina = 0.4
 0.3  0.024 in. 99.5% alumina.
3. Square Wave, f = 40 kHz, PW = 200 ns
Test Duration = 60 s, TJ = 25°C prior to surge.
Device
Package
Shipping
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 8
MARKING
DIAGRAM
1
2
3
BAS16LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
CATHODE
1
ANODE
BAS16LT3G
SOT−23
(Pb−Free)
10000/Tape & Reel
1
A6 M
G
G
A6
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
SBAS16LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
SBAS16LT3G
SOT−23
(Pb−Free)
10000/Tape & Reel
www.onsemi.com


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