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VS-30BQ100-M3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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VS-30BQ100-M3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Document Number: 93360 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 13-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Schottky Rectifier, 3 A VS-30BQ100-M3 Vishay Semiconductors FEATURES • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition • Small foot print, surface mountable • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC DESCRIPTION The VS-30BQ100-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. PRODUCT SUMMARY Package SMC IF(AV) 3.0 A VR 100 V VF at IF 0.62 V IRM 5 mA at 125 °C TJ max. 175 °C Diode variation Single die EAS 3.0 mJ Cathode Anode SMC MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 3.0 A VRRM 100 V IFSM tp = 5 μs sine 800 A VF 3.0 Apk, TJ = 125 °C 0.62 V TJ Range - 55 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL VS-30BQ100-M3 UNITS Maximum DC reverse voltage VR 100 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current IF(AV) 50 % duty cycle at TL = 148 °C, rectangular waveform 3.0 A 50 % duty cycle at TL = 138 °C, rectangular waveform 4.0 Maximum peak one cycle non-repetitive surge current IFSM 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied 800 10 ms sine or 6 ms rect. pulse 70 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.0 A, L = 6 mH 3.0 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A |
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