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VS-SD703CL Datasheet(PDF) 2 Page - Vishay Siliconix |
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VS-SD703CL Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 11 page  VS-SD703C..L Series www.vishay.com Vishay Semiconductors Revision: 04-Apr-14 2 Document Number: 93179 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS SD703C..L UNITS s20 s30 Maximum average forward current at heatsink temperature IF(AV) 180° conduction, half sine wave Double side (single side) cooled 700 (365) 790 (400) A 55 (85) 55 (85) °C Maximum RMS forward current IF(RMS) 25 °C heatsink temperature double side cooled 1320 1470 A Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 9300 9600 t = 8.3 ms 9730 10 050 t = 10 ms 100 % VRRM reapplied 7820 8070 t = 8.3 ms 8190 8450 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 432 460 kA2s t = 8.3 ms 395 420 t = 10 ms 100 % VRRM reapplied 306 326 t = 8.3 ms 279 297 Maximum I2 t for fusing I2 t t = 0.1 to 10 ms, no voltage reapplied 4320 4600 kA2 s Low level value of threshold voltage VF(TO)1 (16.7 % x x I F(AV) < I < x IF(AV)), TJ = TJ maximum 1.00 0.95 V High level value of threshold voltage VF(TO)2 (I > x I F(AV)), TJ = TJ maximum 1.11 1.05 Low level value of forward slope resistance rf1 (16.7 % x x I T(AV) < I < x IT(AV)), TJ = TJ maximum 0.80 0.60 mW High level value of forward slope resistance rf2 (I > x I T(AV)), TJ = TJ maximum 0.76 0.56 Maximum forward voltage drop VFM Ipk = 1500 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 2.20 1.85 V RECOVERY CHARACTERISTICS CODE MAXIMUM VALUE AT TJ = 25 °C TEST CONDITIONS TYPICAL VALUES AT TJ = 150 °C trr AT 25 % IRRM (μs) Ipk SQUARE PULSE (A) dI/dt (A/μs) Vr (V) trr AT 25 % IRRM (μs) Qrr (μC) Irr (A) S20 2.0 1000 50 - 50 3.5 240 110 S30 3.0 5.0 380 130 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating and storage temperature range TJ, TStg - 40 to 150 °C Maximum thermal resistance, case junction to heatsink RthJ-hs DC operation single side cooled 0.092 K/W DC operation double side cooled 0.046 Mounting force, ± 10 % 9800 (1000) N (kg) Approximate weight 250 g Case style See dimensions - link at the end of datasheet DO-200AB (B-PUK) R thJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.011 0.011 0.008 0.008 TJ = TJ maximum K/W 120° 0.013 0.014 0.013 0.013 90° 0.017 0.017 0.018 0.018 60° 0.024 0.025 0.026 0.026 30° 0.043 0.043 0.043 0.044 I FM t rr dir dt I RM(REC) Q rr t |
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