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BAS16T Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BAS16T Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 3 page Production specification Surface Mount Fast Switching Diode BAS16T/BAW70T/BAW56T/BAV99T H002 ww.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR=100μA 85 V Leakage current IR VR=75V VR=75V,Tj=150℃ VR=25V,Tj=150℃ VR=25V 2.0 100 60 30 μA μA μA nA Forward voltage VF IF=1.0mA IF=10mA IF=50mA IF=150mA 0.715 0.855 1.0 1.25 V Transition frequency fT VCE=5V, IC=10mA,f=100KHz 100 MHz Typical total capacitance CT VR=0V,f=1MHz 1.5 pF Reverse recovery Time trr IF=IR=10mA,Irr=0.1*IR,RL=100Ω 4.0 ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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