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SI4410BDY-T1-E3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4410BDY-T1-E3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Si4410BDY Vishay Siliconix Document Number: 72211 S-50366—Rev. C, 28-Feb-05 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 400 800 1200 1600 2000 0 6 12 18 24 30 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 1020304050 0 2 4 6 8 10 0 5 10 15 20 25 0.0 0.4 0.8 1.2 1.6 2.0 −50 −25 0 25 50 75 100 125 150 Crss VDS = 15 V ID = 10 A VGS = 10 V ID = 10 A VGS = 10 V Gate Charge On-Resistance vs. Drain Current Qg − Total Gate Charge (nC) VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) VGS = 4.5 V 1.0 1.2 0.00 0.02 0.04 0.06 0.08 0.10 02468 10 1 10 50 ID = 10 A 0.00 0.2 0.4 0.6 0.8 TJ = 25_C TJ = 150_C Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Coss Ciss |
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