Si5445DC

Vishay Siliconix

Document Number: 71063

S-21251—Rev. B, 05-Aug-02

www.vishay.com

2-1

P-Channel 1.8-V (G-S) MOSFET

PRODUCT SUMMARY

7.1

--8

6.2

5.7

1206-8 ChipFETt

D

D

D

G

D

D

D

S

1

S

G

D

P-Channel MOSFET

Bottom View

Marking Code

BC XX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si5445DC-T1

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

--8

V

Gate-Source Voltage

8

V

7.1

5.2

5.2

3.7

A

Pulsed Drain Current

20

A

--2.1

--1.1

2.5

1.3

W

1.3

0.7

W

Operating Junction and Storage Temperature Range

--55 to 150

_

C

260

_

C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

M i

J

ti

t ≤ 5sec

R

40

50

Steady State

80

95

_

C/W

Maximum Junction-to-Foot (Drain)

Steady State

15

20

C/

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation

process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-

nection.

c.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.