IRF820S, SiHF820S, IRF820L, SiHF820L

www.vishay.com

Vishay Siliconix

S15-1659-Rev. D, 20-Jul-15

1

Document Number: 91060

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

• Surface mount

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

Note



RoHS-compliant and / or parts that are non-RoHS-compliant. For



example, parts with lead (Pb) terminations are not RoHS-compliant.



Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.



capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

500

3.0

24

3.3

13

Configuration

Single

N-Channel MOSFET

G

D

S

G

D

S

G

D

S

Available

Available

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

SiHF820S-GE3

SiHF820L-GE3

Lead (Pb)-free

IRF820SPbF

IRF820LPbF

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

± 20

Continuous Drain Current

2.5

A

1.6

8.0

Linear Derating Factor

0.40

W/°C

0.025

210

mJ

2.5

A

5.0

mJ

Maximum Power Dissipation

50

W

3.1

dV/dt

3.5

V/ns

Operating Junction and Storage Temperature Range

-55 to +150

°C

for 10 s

300