2N3055 datasheet(2/2 Pages) MICROSEMI | NPN POWER SILICON TRANSISTOR

2 page

2N3055 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

Symbol

Min.

Max.

Unit

ON CHARACTERISTICS

Forward-Current Transfer Ratio

IC = 0.5 Adc, VCE = 4.0 Vdc

IC = 4.0 Adc, VCE = 4.0 Vdc

IC = 10 Adc, VCE = 4.0 Vdc

hFE

5.0

Collector-Emitter Saturation Voltage

IC = 4.0 Adc, IB = 0.4 Adc

IC = 10 Adc, IB = 3.3 Adc

VCE(sat)

0.75

2.0

Vdc

Base-Emitter Saturation Voltage

IC = 4.0 Adc, VCE = 4.0 Vdc

VBE(sat)

1.4

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 4.0 Adc, VCE = 4.0 Vdc, f = 100 kHz

h

fe

8.0

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

Cobo

700

SWITCHING CHARACTERISTICS

Turn-On Time

VCC = 30 Vdc; IC = 4.0 Adc; IB1= 0.4 Adc

ton

6.0

µs

Turn-Off Time

VCC = 30 Vdc; IC = 4.0 Adc; IB1 = -IB2 = 0.4 Adc

toff

µs

SAFE OPERATING AREA

DC Tests

TC = +25

0C, 1 Cycle, t = 1.0 s

Test 1

VCE = 7.8 Vdc, IC = 15 Adc

Test 2

VCE = 70 Vdc, IC = 1.67 Adc

Switching Tests

TA = +25

0C; duty cycle

≤ 10%; R

S ≤ 0.1 Ω

Test 1

tP = 5.0 ms; RBB1 = 2.0 Ω; VBB1 ≥ 10 Vdc; RBB2 = 100 Ω; VCC ≥ 10 Vdc; VBB2 = 1.5 Vdc; IC = 15 Adc

Test 2

tP = 20 ms; RBB1 = 30 Ω; VBB1 ≥ 10 Vdc; RBB2 = 100 Ω; VCC ≥ 10 Vdc; VBB2 = 1.5 Vdc; IC = 3.8 Adc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

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