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SI8441DB Datasheet(PDF) 5 Page - Vishay Siliconix |
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SI8441DB Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 9 page Document Number: 74668 S-82119-Rev. C, 08-Sep-08 www.vishay.com 5 Vishay Siliconix Si8441DB TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 150 °C 10 VSD - Source-to-Drain Voltage (V) 1 TJ = 25 °C 100 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient VGS - Gate-to-Source Voltage (V) 0.05 0.10 0.15 0.20 0.25 0 1 234 5 ID =1A 125 °C 25 °C 0 5 10 15 20 25 30 Pulse (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.01 10 1ms 0.1 Limited byR DS(on)* TC = 25 °C Single Pulse 10 ms 100 ms 1s,10s DC 100 µs BVDSS Limited |
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