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SI7380ADP Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7380ADP Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 73408 S-80439-Rev. B, 03-Mar-08 Vishay Siliconix Si7380ADP Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 37 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 4.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.6 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 20 A 0.0024 0.003 Ω VGS = 4.5 V, ID = 20 A 0.0027 0.0035 Forward Transconductancea gfs VDS = 15 V, ID = 20 A 150 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 7785 pF Output Capacitance Coss 780 Reverse Transfer Capacitance Crss 335 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 15 A 122 185 nC VDS = 15 V, VGS = 4.5 V, ID = 15 A 54 85 Gate-Source Charge Qgs 14.5 Gate-Drain Charge Qgd 8 Gate Resistance Rg f = 1 MHz 0.5 1.0 1.5 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 17 25 ns Rise Time tr 13 20 Turn-Off Delay Time td(off) 155 235 Fall Time tf 35 55 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 40 A Pulse Diode Forward Currenta ISM 70 Body Diode Voltage VSD IS = 5 A 0.68 1.1 V Body Diode Reverse Recovery Time trr IF = 3 A, di/dt = 100 A/µs, TJ = 25 °C 45 70 ns Body Diode Reverse Recovery Charge Qrr 52 80 nC Reverse Recovery Fall Time ta 22 ns Reverse Recovery Rise Time tb 23 |
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