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AM29F016-150SI Datasheet(PDF) 1 Page - Advanced Micro Devices |
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AM29F016-150SI Datasheet(HTML) 1 Page - Advanced Micro Devices |
1 / 36 page FINAL Publication# 18805 Rev: D Amendment/0 Issue Date: April 1997 Am29F016 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements s Compatible with JEDEC-standards — Pinout and software compatible with single-power supply Flash — Superior inadvertent write protection s 48-pin TSOP s 44-pin SO s Minimum 100,000 write/erase cycles guaranteed s High performance — 70 ns maximum access time s Sector erase architecture — Uniform sectors of 64 Kbytes each — Any combination of sectors can be erased. Also supports full chip erase s Group sector protection — Hardware method that disables any combination of sector groups from write or erase operations (a sector group consists of 4 adjacent sectors of 64 Kbytes each) s Embedded Erase Algorithms — Automatically pre-programs and erases the chip or any sector s Embedded Program Algorithms — Automatically programs and verifies data at specified address s Data Polling and Toggle Bit feature for detection of program or erase cycle completion s Ready/Busy output (RY/BY) — Hardware method for detection of program or erase cycle completion s Erase Suspend/Resume — Supports reading or programming data to a sector not being erased s Low power consumption — 25 mA typical active read current — 30 mA typical program/erase current s Enhanced power management for standby mode —<1 µA typical standby current — Standard access time from standby mode s Hardware RESET pin — Resets internal state machine to the read mode GENERAL DESCRIPTION The Am29F016 is a 16 Mbit, 5.0 Volt-only Flash memory organized as 2 Megabytes of 8 bits each. The 2 Mbytes of data is divided into 32 sectors of 64 Kbytes for flexible erase capability. The 8 bits of data appear on DQ0–DQ7. The Am29F016 is offered in 48-pin TSOP and 44-pin SO packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. 12.0 Volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers. The standard Am29F016 offers access times of 70 ns, 90 ns, 120 ns, and 150 ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention, the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. The Am29F016 is entirely command set compatible with the JEDEC single-power supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0 Volt Flash or EPROM devices. The Am29F016 is programmed by executing the pro- gram command sequence. This will invoke the Embed- |
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