Nombre de pieza
         Descripción
HD2A

 SOT 23 SILICON PLANAR HIGH SPEED SWITCHING DIODES ( 1 Page)


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SILICON PLANAR
HD2A
HD3A
HIGH SPEED SWITCHING DIODES
I
HD4A
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V
R
75
V
Forward Current
I
F
100
mA
Power Dissipation at
T
amb =
25°C
P TO T
330
mW
Operating and Storage Temperature Range
tj:tstg
–55 to
+15 0
oc
ELECTRICAL CHARACTERISTICS (at T
j =
25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS
Breakdown Voltage
V BR
85
V
I
R = 100µA
Forward Voltage
V
F
0.5
0.71 5
V
l
F =1m A
1.0
v
l
F =10m A
Reverse Current
I
R
1.0
µA
V R =75 V
60
µA
V R =75V, TJ =12 5
o C
Total Capacitance
C
T
4
pF
V R =O, f=lMH z
Reverse Recovery Time
t
rr
Typ .
6
ns
I
F =
l0mA, I
R =
10mA
I
rr = 1 mA
1 



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