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4N27-X Datasheet(PDF) 2 Page - Vishay Siliconix |
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4N27-X Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page 4N25-X, 4N26-X, 4N27-X, 4N28-X www.vishay.com Vishay Semiconductors Rev. 1.2, 16-Jan-12 2 Document Number: 81864 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Notes • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (1) JEDEC registered values are 2500 V, 1500 V, 1500 V and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively. ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6V Forward current IF 60 mA Surge current t ≤ 10 μs IFSM 2.5 A Power dissipation Pdiss 70 mW OUTPUT Collector emitter breakdown voltage VCEO 70 V Emitter base breakdown voltage VEBO 7V Collector current IC 50 mA Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Output power dissipation Pdiss 150 mW COUPLER Isolation test voltage VISO 5000 VRMS Creepage distance ≥ 7mm Clearance distance ≥ 7mm Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index DIN IEC 112/VDE0303, part 1 ≥ 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Junction temperature Tj 100 °C Soldering temperature (1) 2 mm from case, ≤ 10 s Tsld 260 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage (1) IF = 50 mA VF 1.36 1.5 V Reverse current (1) VR = 3.0 V IR 0.1 100 μA Capacitance VR = 0 V CO 25 pF OUTPUT Collector base breakdown voltage (1) IC = 100 μA BVCBO 70 V Collector emitter breakdown voltage(1) IC = 1.0 mA BVCEO 30 V Emitter collector breakdown voltage (1) IE = 100 μA BVECO 7V ICEO(dark) (1) VCE = 10 V, (base open) 4N25 5 50 nA 4N26 5 50 nA 4N27 5 50 nA 4N28 10 100 nA ICBO(dark) (1) VCB = 10 V, (emitter open) 2.0 20 nA Collector emitter capacitance VCE = 0 CCE 6.0 pF COUPLER Isolation test voltage (1) Peak, 60 Hz VIO 5000 V Saturation voltage, collector emitter ICE = 2.0 mA, IF = 50 mA VCE(sat) 0.5 V Resistance, input output (1) VIO = 500 V RIO 100 G Ω Capacitance, input output f = 1 MHz CIO 0.5 pF |
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Descripción similar - 4N27-X |
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