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BCW68H Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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BCW68H Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 4 page Production specification PNP General Purpose Amplifier BCW67/BCW68 C161 www.gmicroelec.com Rev.A 1 FEATURES For general AF applications. High current gain. Low collector-emitter saturation voltage. Complementary types:BCW65,BCW66(NPN). APPLICATIONS This device is designed for general purpose amplifier and switching applications. SOT-23 ORDERING INFORMATION Type No. Marking Package Code BCW67A/B/C DA/DB/DC SOT-23 BCW68F/G/H DF/DG/DH SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter BCW67 BCW68 Unit VCBO Collector-Base Voltage -45 -60 V VCEO Collector-Emitter Voltage -32 -45 V VEBO Emitter-Base Voltage --5 -5 V ICM Peak collector current -1 A IC Collector Current -Continuous -800 mA PD Total Device Dissipation 330 mW RthJS Junction thermal resistance 215 ℃ /W Tj,Tstg Junction and Storage Temperature -65 to +150 ℃ Pb Lead-free |
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