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STB6N62K3 Datasheet(PDF) 3 Page - STMicroelectronics |
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STB6N62K3 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 19 page STB6N62K3, STD6N62K3 Electrical ratings Doc ID 022605 Rev 1 3/19 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit D²PAK DPAK VDS Drain-source voltage 620 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 5.5 A ID Drain current (continuous) at TC = 100 °C 3 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 22 A PTOT Total dissipation at TC = 25 °C 90 W IAR (2) 2. Pulse width limited by Tj max. Avalanche current, repetitive or not-repetitive 5.5 A EAS (3) 3. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. Single pulse avalanche energy 140 mJ ESD Gate-source human body model (R=1.5 k Ω, C=100 pF) 2.5 kV dv/dt (4) 4. ISD ≤ 5.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS. Peak diode recovery voltage slope 12 V/ns Tstg Storage temperature -55 to 150 °C Tj Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter D²PAK DPAK Unit Rthj-case Thermal resistance junction-case max. 1.39 °C/W Rthj-pcb (1) 1. When mounted on 1inch² FR-4 board, 2 oz Cu. Thermal resistance junction-pcb max. 30 50 °C/W |
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