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STB33N65M2 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STB33N65M2
Descripción Electrónicos  N-channel 650 V, 0.117 ??typ., 24 A MDmesh??M2 Power MOSFETs in D짼PAK, TO-220FP, TO-220 and I짼PAK packages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
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DocID027286 Rev 1
3/23
STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2
Electrical ratings
23
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
D2PAK, TO-220,
I2PAK
TO-220FP
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
24
24(1)
1.
Current limited by package.
A
ID
Drain current (continuous) at TC = 100 °C
15
15(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
96
A
PTOT
Total dissipation at TC = 25 °C
190
34
W
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; TC=25 °C)
2500
V
dv/dt (3)
3.
ISD ≤ 24 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V
Peak diode recovery voltage slope
15
V/ns
dv/dt(4)
4.
VDS ≤ 520 V
MOSFET dv/dt ruggedness
50
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D2PAK TO-220FP TO-220 I2PAK
Rthj-case
Thermal resistance junction-case max
0.66
3.68
0.66
°C/W
Rthj-pcb
(1)
1.
When mounted on 1 inch² FR-4, 2 Oz copper board
Thermal resistance junction-pcb max
30
°C/W
Rthj-amb
Thermal resistance junction-ambient
max
62.5
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
2.5
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, ID= IAR; VDD=50 V)
780
mJ


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