Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

STF4N80K5 Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STF4N80K5
Descripción Electrónicos  N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
Download  23 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF4N80K5 Datasheet(HTML) 5 Page - STMicroelectronics

  STF4N80K5 Datasheet HTML 1Page - STMicroelectronics STF4N80K5 Datasheet HTML 2Page - STMicroelectronics STF4N80K5 Datasheet HTML 3Page - STMicroelectronics STF4N80K5 Datasheet HTML 4Page - STMicroelectronics STF4N80K5 Datasheet HTML 5Page - STMicroelectronics STF4N80K5 Datasheet HTML 6Page - STMicroelectronics STF4N80K5 Datasheet HTML 7Page - STMicroelectronics STF4N80K5 Datasheet HTML 8Page - STMicroelectronics STF4N80K5 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 23 page
background image
DocID025105 Rev 3
5/23
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Electrical characteristics
23
The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD
capability of the device. The Zener voltage is appropriate for efficient and cost-effective
intervention to protect the device integrity. These integrated Zener diodes thus eliminate the
need for external components.
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
Turn-on delay time
VDD = 400 V, ID = 1.5 A,
RG = 4.7 , VGS = 10 V
(see Figure 18)
-
16.5
-
ns
tr
Rise time
-
15
-
ns
td(off)
Turn-off-delay time
-
36
-
ns
tf
Fall time
-
21
-
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
ISD
Source-drain current
-
3
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
12
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 3 A, VGS = 0
-
1.5
V
trr
Reverse recovery time
ISD = 3 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 20)
-242
ns
Qrr
Reverse recovery charge
-
1.42
µC
IRRM
Reverse recovery current
-
12
A
trr
Reverse recovery time
ISD = 3 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 20)
-373
ns
Qrr
Reverse recovery charge
-
1.98
µC
IRRM
Reverse recovery current
-
10.5
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V(BR)GSO
Gate-source breakdown
voltage
IGS= ± 1 mA, ID=0
30
-
V


Número de pieza similar - STF4N80K5

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
VBsemi Electronics Co.,...
STF4N80K5 VBSEMI-STF4N80K5 Datasheet
2Mb / 9P
   Power MOSFET
More results

Descripción similar - STF4N80K5

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
STMicroelectronics
STD2N105K5 STMICROELECTRONICS-STD2N105K5 Datasheet
1Mb / 21P
   N-channel 1050 V, 6 廓 typ., 1.5 A MDmesh??K5 Power MOSFETs in DPAK, TO-220 and IPAK packages
November 2014 Rev 3
STD3NK80Z-1 STMICROELECTRONICS-STD3NK80Z-1_V01 Datasheet
1Mb / 29P
   N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages
Rev 7 April 2017
STP3LN80K5 STMICROELECTRONICS-STP3LN80K5 Datasheet
804Kb / 15P
   N-channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5 Power MOSFET in TO-220 and IPAK packages
June 2016
STD11N65M5 STMICROELECTRONICS-STD11N65M5 Datasheet
1Mb / 25P
   N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
STP7N105K5 STMICROELECTRONICS-STP7N105K5 Datasheet
989Kb / 18P
   N-channel 1050 V, 1.4 廓 typ., 4 A MDmesh??K5 Power MOSFETs in TO-220, IPAK and TO-247 packages
October 2016 Rev 2
STD4N52K3 STMICROELECTRONICS-STD4N52K3 Datasheet
1Mb / 21P
   N-channel 525 V, 2.5 A, 2.1 廓 typ., SuperMESH3??Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
STF4LN80K5 STMICROELECTRONICS-STF4LN80K5 Datasheet
719Kb / 13P
   N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a TO-220FP package
May 2016
STP9N80K5 STMICROELECTRONICS-STP9N80K5 Datasheet
795Kb / 16P
   N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages
July 2016
STF11N65M5 STMICROELECTRONICS-STF11N65M5 Datasheet
1Mb / 25P
   N-channel 650 V, 0.43 廓 typ., 9 A MDmesh??V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
December 2012 Rev 2
STF14N80K5 STMICROELECTRONICS-STF14N80K5 Datasheet
766Kb / 16P
   N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages
December 2015
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com