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STF16N50M2 Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza STF16N50M2
Descripción Electrónicos  Extremely low gate charge
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STF16N50M2 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD16N50M2, STF16N50M2, STP16N50M2
4/21
DocID026641 Rev 5
2
Electrical characteristics
(TC = 25 °C unless otherwise specified).
Table 5: On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
500
V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 500 V
1
µA
VGS = 0 V, VDS = 500 V,
TC = 125 °C (1)
100
µA
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 6.5 A
0.24
0.28
Ω
Notes:
(1)Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS= 100 V, f = 1 MHz,
VGS = 0 V
-
710
-
pF
Coss
Output capacitance
-
44
-
pF
Crss
Reverse transfer
capacitance
-
1.35
-
pF
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 V to 400 V, VGS = 0 V
-
192
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID= 0 A
-
5.2
-
Ω
Qg
Total gate charge
VDD = 400 V, ID = 13 A,
VGS = 0 to 10 V
(see Figure 19: "Test circuit for
gate charge behavior")
-
19.5
-
nC
Qgs
Gate-source charge
-
4
-
nC
Qgd
Gate-drain charge
-
8
-
nC
Notes:
(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 250 V, ID = 6.5 A
RG = 4.7
Ω, VGS = 10 V
(see Figure 18: "Test circuit for
resistive load switching times"
and Figure 23: "Switching time
waveform")
-
9.6
-
ns
tr
Rise time
-
7.6
-
ns
td(off)
Turn-off-delay time
-
32
-
ns
tf
Fall time
-
10
-
ns


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