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2SC2712 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC2712 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification Silicon Epitaxial Planar Transistor 2SC2712 C021 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=2mA 70 700 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.1 0.25 V Transition frequency fT VCE=10V, IC= 1mA 80 MHz Output capacitance Cob VCB=10V, IE=0,f=1MHz 2.0 3.5 pF Noise Figure NF VCE=6V,IC=0.1mA,f=1kHz 1.0 10 dB CLASSIFICATION OF hFE(1) Rank O Y GR BL Range 70-140 120-240 200-400 350-700 Marking LO LY LG LL |
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