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STF6N52K3 Datasheet(PDF) 8 Page - STMicroelectronics |
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STF6N52K3 Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 22 page  Electrical characteristics STB6N52K3, STD6N52K3, STF6N52K3, STP6N52K3 8/22 Doc ID 14994 Rev 2 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs starting Tj VGS(th) 1.00 0.90 0.80 0.70 -75 TJ(°C) (norm) -25 1.10 75 25 125 AM08862v1 RDS(on) 2.0 1.5 1.0 0.5 -75 TJ(°C) (norm) -25 75 25 125 2.5 0 AM08863v1 VSD 0 2 ISD(A) (V) 1 5 3 4 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TJ=-50°C TJ=150°C TJ=25°C 67 8 AM08865v1 BVDSS -75 TJ(°C) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 AM08864v1 EAS 0 40 TJ(°C) (mJ) 20 100 60 80 0 10 20 30 40 120 140 50 60 70 80 90 100 110 ID=2.5A VDD=50 V AM08866v1 |
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