STF13N60M2 datasheet(5/14 Pages) STMICROELECTRONICS

No. de pieza	STF13N60M2

Descripción Electrónicos	Low gate input resistance

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STF13N60M2, STFI13N60M2

Electrical characteristics

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

I

SD

Source-drain current

-

11

A

I

SDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

44

A

V

SD

(2)

2.

Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

I

SD

= 11 A, V

GS

= 0

-

1.6

V

t

rr

Reverse recovery time

I

SD

= 11 A, di/dt = 100 A/μs

V

DD

= 60 V (see

Figure 16)

-297

ns

Q

rr

Reverse recovery charge

-

2.8

μC

I

RRM

Reverse recovery current

-

18.5

A

t

rr

Reverse recovery time

I

SD

= 11 A, di/dt = 100 A/μs

V

DD

= 60 V, T

j

=150 °C

(see

Figure 16)

-394

ns

Q

rr

Reverse recovery charge

-

3.8

μC

I

RRM

Reverse recovery current

-

19

A

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