STFW3N170 datasheet(4/12 Pages) STMICROELECTRONICS

No. de pieza	STFW3N170

Descripción Electrónicos	N-channel 1700 V, 7 廓 typ., 2.6 A PowerMESH??Power MOSFET in a TO-3PF package

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Electrical characteristics

STFW3N170

4/12

DocID023985 Rev 3

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

1700

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 1700 V

10

µA

VGS = 0 V, VDS = 1700 V,

Tcase = 125 °C

500

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±30 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 1.3 A

7

13

Ω

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

-

1100

-

pF

Coss

Output capacitance

-

50

-

Crss

Reverse transfer

capacitance

-

7

-

RG

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

-

3.6

-

Ω

Qg

Total gate charge

VDD = 1360 V, ID = 2.6 A,

VGS = 10 V (see Figure

15: "Gate charge test

circuit")

-

44

-

nC

Qgs

Gate-source charge

-

7

-

Qgd

Gate-drain charge

-

25

-

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 850 V, ID = 1.3 A

RG = 4.7

Ω, VGS = 10 V

(see Figure 14:

"Switching times test

circuit for resistive load"

and Figure 19: "Switching

time waveform")

-

25

-

ns

tr

Rise time

-

9

-

td(off)

Turn-off delay time

-

51

-

tf

Fall time

-

53

-

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