STGP10H60DF datasheet(4/24 Pages) STMICROELECTRONICS

No. de pieza	STGP10H60DF

Descripción Electrónicos	Trench gate field-stop IGBT, H series 600 V, 10 A high speed

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STGB10H60DF, STGF10H60DF, STGP10H60DF

4/24

DocID025111 Rev 2

2

Electrical characteristics

T

J

= 25 °C unless otherwise specified.

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)CES

Collector-emitter

breakdown voltage

(V

GE

= 0)

I

C

= 2 mA

600

V

CE(sat)

Collector-emitter saturation

voltage

V

GE

= 15 V, I

C

= 10 A

1.5

1.95

V

GE

= 15 V, I

C

= 10 A

T

J

= 125 °C

1.65

V

GE

= 15 V, I

C

= 10 A

T

J

= 175 °C

1.7

V

GE(th)

Gate threshold voltage

V

CE

= V

GE

, I

C

= 1 mA

5.0

6.0

7.0

V

I

CES

Collector cut-off current

(V

GE

= 0)

V

CE

= 600 V

25

μA

I

GES

Gate-emitter leakage

current (V

CE

= 0)

V

GE

= ± 20 V

250

nA

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

ies

Input capacitance

V

CE

= 25 V, f = 1 MHz,

V

GE

= 0

-1300

-

pF

C

oes

Output capacitance

-

60

-

pF

C

res

Reverse transfer

capacitance

-30

-

pF

Q

g

Total gate charge

V

CC

= 480 V, I

C

= 10 A,

V

GE

= 15 V

-57

-

nC

Q

ge

Gate-emitter charge

-

8

-

nC

Q

gc

Gate-collector charge

-

27

-

nC

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STGP10H60DF Datasheet(PDF) 4 Page - STMicroelectronics

STGP10H60DF Datasheet(HTML) 4 Page - STMicroelectronics

Número de pieza similar - STGP10H60DF

Descripción similar - STGP10H60DF

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