STGP20V60F datasheet(3/18 Pages) STMICROELECTRONICS

No. de pieza	STGP20V60F

Descripción Electrónicos	600 V, 20 A very high speed trench gate field-stop IGBT

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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DocID024890 Rev 1

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STGB20V60F, STGP20V60F

Electrical ratings

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

CES

Collector-emitter voltage (V

GE

= 0)

600

V

I

C

Continuous collector current at T

C

= 25 °C

40

A

I

C

Continuous collector current at T

C

= 100 °C

20

A

I

CP

(1)

1.

Pulse width limited by maximum junction temperature.

Pulsed collector current

80

A

V

GE

Gate-emitter voltage

±20

V

P

TOT

Total dissipation at T

C

= 25 °C

167

W

T

STG

Storage temperature range

- 55 to 150

°C

T

J

Operating junction temperature

- 55 to 175

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

R

thJC

Thermal resistance junction-case

0.9

°C/W

R

thJA

Thermal resistance junction-ambient

50

°C/W

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