STGW100N30 datasheet(4/13 Pages) STMICROELECTRONICS

No. de pieza	STGW100N30

Descripción Electrónicos	90 A - 330 V - fast IGBT

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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Product(s)

Electrical characteristics

STGF100N30, STGP100N30, STGW100N30

4/13

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)CES

Collector-emitter breakdown

voltage (VGE= 0)

IC= 1 mA

330

V

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15 V, IC= 50 A

VGE= 15 V, IC= 100 A,TC=125 °C

1.9

2.6

2.5

V

VGE(th)

Gate threshold voltage

VCE=10 V, IC= 1 mA

3.0

5.5

V

ICES

Collector cut-off current

(VGE=0)

VCE= 330 V

VCE= 330 V, TC = 125 °C

13

200

µA

IGES

Gate-emitter leakage current

(VCE= 0)

VGE= ± 20 V

±1

µA

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ries

Cies

Coes

Cres

Input resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

2

3550

35

335

Ω

pF

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trise

tdoff

tfall

Turn-off voltage rise time

Turn-off delay time

Turn-off current fall time

VGE = 15 V, IC = 25 A,

VCC=180 V

RG= 10 Ω, L= 25 µH,

25

134

57

ns

trise

tdoff

tfall

Turn-off voltage rise time

Turn-off delay time

Turn-off current fall time

VGE = 15 V, IC = 25 A,

VCC=180 V

RG= 10 Ω, L= 25 µH,

TC= 150 °C

60

200

110

ns

E/p

Energy per pulse

VCC=240 V, VGE = 15 V,

RG= 5.1 Ω, L= 250 nH

C=0.40 µF

(see Figure 15)

490

µJ

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