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STP265N6F6AG Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STP265N6F6AG
Descripción Electrónicos  High avalanche ruggedness
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP265N6F6AG Datasheet(HTML) 1 Page - STMicroelectronics

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November 2016
DocID027281 Rev 3
1/13
This is information on a product in full production.
www.st.com
STP265N6F6AG
Automotive-grade N-
channel 60 V, 2.3 mΩ typ., 180 A
STripFET™ F6 Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on) max
ID
STP265N6F6AG
60 V
2.85 mΩ
180 A
AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using
the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Table 1: Device summary
Order code
Marking
Package
Packing
STP265N6F6AG
265N6F6
TO-220
Tube
AM01475v1_Tab
D(2, TAB)
G(1)
S(3)


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