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STEF05D Datasheet(PDF) 9 Page - STMicroelectronics |
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STEF05D Datasheet(HTML) 9 Page - STMicroelectronics |
9 / 19 page DocID024394 Rev 1 9/19 STEF05D Typical application 5.1.2 Normal operating condition The STEF05D E-fuse behaves like a mechanical fuse, buffering the circuitry on its output with the same voltage shown at its input, with a small voltage fall due to the N-channel MOSFET RDSOn. 5.1.3 Output voltage clamp This internal protection circuit clamps the output voltage to a maximum safe value, typically 6.65V, if the input voltage exceeds this threshold. 5.1.4 Current limiting When an overload event occurs, the current limiting circuit reduces the conductivity of the power MOSFET, in order to clamp the output current at the value selected externally by means of the limiting resistor RLimit (Figure 3). 5.1.5 Thermal shutdown If the device temperature exceeds the thermal latch threshold, typically 165°C, the thermal shutdown circuitry turns the power MOSFET off, thus disconnecting the load. The EN/Fault pin of the device will automatically be set at an intermediate voltage, in order to signal the overtemperature event. From this condition the E-fuse can be reset either by cycling the supply voltage or by pulling down the EN pin below the Vil threshold, and then releasing it. 5.2 RLimit calculation As shown in Figure 3, the device uses an internal N-channel sense FET with a fixed ratio, to monitor the output current and limit it at the level set by the user. The RLimit value for achieving the requested current limitation can be estimated by using the following theoretical formula, together with the graph in Figure 13: Equation 1 5.3 Cdv/dt calculation Connecting a capacitor between the Cdv/dt pin and GND will allow the modification of the output voltage ramp time. Given the desired time interval t during which the output voltage goes from zero to his maximum value, the capacitance to be added on Cdv/dt pin can be calculated using the following theoretical formula: RLimit 42 Ishort ---------------- = |
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