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ADF4212BCP Datasheet(PDF) 4 Page - Analog Devices |
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ADF4212BCP Datasheet(HTML) 4 Page - Analog Devices |
4 / 20 page REV. A ADF4210/ADF4211/ADF4212/ADF4213 –4– DB0 (LSB) (CONTROL BIT C1) CLOCK DATA LE LE DB20 (MSB) DB19 DB2 DB1 (CONTROL BIT C2) t6 t5 t1 t2 t3 t4 Figure 1. Timing Diagram TIMING CHARACTERISTICS Limit at TMIN to TMAX Parameter (B Version) Unit Test Conditions/Comments t1 10 ns min DATA to CLOCK Set-Up Time t2 10 ns min DATA to CLOCK Hold Time t3 25 ns min CLOCK High Duration t4 25 ns min CLOCK Low Duration t5 10 ns min CLOCK to LE Set-Up Time t6 20 ns min LE Pulsewidth NOTES Guaranteed by design but not production tested. Specifications subject to change without notice. (VDD1 = VDD2 = 3 V 10%, 5 V 10%; VDD1, VDD2 ≤ VP1, VP2 ≤ 6 V 10%; AGNDRF = DGNDRF = AGNDIF = DGNDIF = 0 V; TA = TMIN to TMAX unless otherwise noted.) ABSOLUTE MAXIMUM RATINGS 1, 2 (TA = 25 °C unless otherwise noted) VDD1 to GND 3 . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V VDD1 to VDD2 . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V VP1, VP2 to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V VP1, VP2 to VDD1 . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.5 V Digital I/O Voltage to GND . . . . . . –0.3 V to DVDD + 0.3 V Analog I/O Voltage to GND . . . . . . . . . –0.3 V to VP + 0.3 V REFIN, RFINA, RFINB, IFINA, IFINB to GND . . . . . . . . . . . . –0.3 V to VDD + 0.3 V Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . . –40 °C to +85°C Storage Temperature Range . . . . . . . . . . . . –65 °C to +150°C Maximum Junction Temperature . . . . . . . . . . . . . . . . 150 °C TSSOP θ JA Thermal Impedance . . . . . . . . . . . . . 150.4 °C/W CSP θJA (Paddle Soldered) . . . . . . . . . . . . . . . . . . . 122°C/W CSP θJA (Paddle Not Soldered) . . . . . . . . . . . . . . . . 216°C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . 215 °C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220 °C NOTES 1Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2This device is a high-performance RF integrated circuit with an ESD rating of < 2 kV and it is ESD sensitive. Proper precautions should be taken for handling and assembly. 3GND = AGND = DGND = 0 V. TRANSISTOR COUNT 11749 (CMOS) and 522 (Bipolar). ORDERING GUIDE Model Temperature Range Package Description Package Option * ADF4210BRU –40 °C to +85°C Thin Shrink Small Outline Package (TSSOP) RU-20 ADF4210BCP –40 °C to +85°C Chip Scale Package CP-20 ADF4211BRU –40 °C to +85°C Thin Shrink Small Outline Package (TSSOP) RU-20 ADF4211BCP –40 °C to +85°C Chip Scale Package CP-20 ADF4212BRU –40 °C to +85°C Thin Shrink Small Outline Package (TSSOP) RU-20 ADF4212BCP –40 °C to +85°C Chip Scale Package CP-20 ADF4213BRU –40 °C to +85°C Thin Shrink Small Outline Package (TSSOP) RU-20 ADF4213BCP –40 °C to +85°C Chip Scale Package CP-20 *Contact the factory for chip availability. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADF4210/ADF4211/ADF4212/ADF4213 features proprietary ESD protection circuitry, per- manent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE |
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