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CDCVF2505DRG4 Datasheet(PDF) 4 Page - Texas Instruments |
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CDCVF2505DRG4 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 23 page 4 CDCVF2505 SCAS640G – JULY 2000 – REVISED AUGUST 2016 www.ti.com Product Folder Links: CDCVF2505 Submit Documentation Feedback Copyright © 2000–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed. (3) This value is limited to 4.3 V maximum. 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VDD Supply voltage –0.5 4.3 V VI Input voltage(2)(3) –0.5 VDD + 0.5 V VO Output voltage(2)(3) –0.5 VDD + 0.5 V IIK Input clamp current (VI < 0 or VI > VDD) ±50 mA IOK Output clamp current (VO < 0 or VO > VDD) ±50 mA IO Continuous total output current (VO = 0 to VDD) ±50 mA Tstg Storage temperature –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 Machine model (MM) ±300 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VDD Supply voltage 3 3.3 3.6 V VIH High-level input voltage 0.7 VDD V VIL Low-level input voltage 0.3 VDD V VI Input voltage 0 VDD V IOH High-level output current –12 mA IOL Low-level output current 12 mA TA Operating free-air temperature –40 85 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. (2) The package thermal impedance is calculated in accordance with JESD 51. 7.4 Thermal Information THERMAL METRIC(1) CDCVF2505 UNIT D (SOIC) PW (TSSOP) 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance(2) 112.3 175.8 °C/W RθJC(top) Junction-to-case (top) thermal resistance 55.8 61.8 °C/W RθJB Junction-to-board thermal resistance 53.1 104.3 °C/W ψJT Junction-to-top characterization parameter 12.8 7.7 °C/W ψJB Junction-to-board characterization parameter 52.5 102.6 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W |
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