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IRF2204 Datasheet(PDF) 1 Page - International Rectifier |
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IRF2204 Datasheet(HTML) 1 Page - International Rectifier |
1 / 9 page Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 150 A IDM Pulsed Drain Current 850 PD @TC = 25°C Power Dissipation 330 W Linear Derating Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 460 mJ IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ TJ Operating Junction and -55 to + 175 °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) HEXFET® Power MOSFET Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G Absolute Maximum Ratings VDSS = 40V RDS(on) = 3.6mΩ ID = 210A Description 08/07/02 www.irf.com 1 ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax Features Typical Applications ● Electric Power Steering ● 14 Volts Automotive Electrical Systems AUTOMOTIVE MOSFET Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.45 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 TO-220AB IRF2204 PD - 94434 |
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